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Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

Boron-Silicon complex defects in GaAs: An ab initio study

(7) Leitsmann, R a Chicker, F a Planitz Ph a Radehaus, C a,b Kretzer, U c Scheffer Czygan, M c Eichler, S c

a GWT TUD GmbH (Germany)

b CHEMNITZ UNIVERSITY OF TECHNOLOGY (Germany)

c Freiberg Instruments GmbH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO STUDY; CHARGE STATE; COMPLEX DEFECTS; ELECTRICAL STATE; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; GAAS; GROWTH CONDITIONS; IMPURITY CONCENTRATION; MATRIX; NATIVE DEFECT; PROCESS SIMULATIONS; THERMAL PROFILES;

BORON; BORON COMPOUNDS; CALCULATIONS; GALLIUM ALLOYS; GALLIUM ARSENIDE; IMPURITIES; SEMICONDUCTING GALLIUM; SILICON;

CRYSTAL DEFECTS;

EID: 79953646047 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3561373 Document Type: Article

Times cited : (13)

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