Indications of field-directing and self-templating effects on the formation of organic lines on silicon

Journal of Chemical Physics

Volumn 134, Issue 11, 2011, Pages

  Zikovsky, Janik ^a   Dogel, Stanislav A ^a,b   Salomons, Mark H ^b   Pitters, Jason L ^b   Dilabio, Gino A ^a,b   Wolkow, Robert A ^a,b  

^a UNIVERSITY OF ALBERTA   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH PROCESS; METAL CONTACTS; MOLECULAR PATTERNS; ORGANIC NANOSTRUCTURES; SI(1 0 0); SILICON SURFACES; TEMPLATING EFFECTS;

DANGLING BONDS; ELECTRIC FIELDS; NANOSTRUCTURES; SCANNING TUNNELING MICROSCOPY;

DIMERS;

EID: 79953196509     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3562367     Document Type: Article

References (21)

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11. A high-resistivity crystal reduces the degree to which electric field lines emanating from the contacts will bend into the surface. However, if the resistivity is too high, the crystal will heat up upon application of a voltage across the leads, and so care was taken in this connection.
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