Comment on channel length and threshold voltage dependence of a transistor mismatch in a 32-nm HKMG technology

IEEE Transactions on Electron Devices

Volumn 58, Issue 4, 2011, Pages 1255-1256

  Hook, Terence B ^a   Johnson, Jeffrey B ^a   Cathignol, Augustin ^b   Cros, Antoine ^c   Ghibaudo, Gérard ^d  

^a IBM MICROELECTRONICS   (United States)

^b IBM   (France)

^c STMICROELECTRONICS   (France)

^d MINATEC   (France)

Author keywords

Analog integrated circuits; MOSFETs

Indexed keywords

ANALOG INTEGRATED CIRCUITS; THRESHOLD VOLTAGE;

CHANNEL LENGTH; MOSFETS; TRANSISTOR DESIGNS; TRANSISTOR MISMATCH; VOLTAGE DEPENDENCE;

TRANSISTORS;

EID: 79953086384     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2104962     Document Type: Review

References (8)

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7. T. Hook, J. Johnson, J.-P. Han, A. Pond, T. Shimizu, and G. Tsutsui, "Channel length and threshold voltage dependence of transistor mismatch in a 32 nm HKMG technology," IEEE Trans. Electron Devices, vol. 57, no. 10, pp. 2440-2447, Oct. 2010.
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