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Volumn 23, Issue 12, 2008, Pages
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Investigation of InGaN/GaN power chip light emitting diodes with TiO 2/SiO2 omnidirectional reflector
a,b b b b a c a |
Author keywords
[No Author keywords available]
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Indexed keywords
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LIGHT EMISSION;
OPTICAL DEVICES;
ORGANIC LIGHT EMITTING DIODES (OLED);
REFLECTION;
SEMICONDUCTING GALLIUM;
SILICON COMPOUNDS;
SURFACE MEASUREMENT;
APPLICATIONS.;
CHIP SIZES;
DRIVING CURRENTS;
EMITTING WAVELENGTHS;
INGAN/GAN;
LIGHT EXTRACTIONS;
LIGHT OUTPUT POWERS;
OMNIDIRECTIONAL REFLECTORS;
OUTPUT POWERS;
POWER CHIPS;
RADIATION PATTERNS;
ROUGH SURFACES;
VERTICAL DIRECTIONS;
WAVELENGTH REGIMES;
WHITE LIGHTS;
LIGHT EMITTING DIODES;
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EID: 58149468074
PISSN: 02681242
EISSN: 13616641
Source Type: Journal
DOI: 10.1088/0268-1242/23/12/125006 Document Type: Article |
Times cited : (9)
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References (12)
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