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Applied Physics A: Materials Science and Processing

Volumn 103, Issue 1, 2011, Pages 179-184

Ion-irradiation enhanced epitaxial growth of sol-gel TiO2 films

(6) Lee, Jung Kun a Jung, Hyun Suk b Wang, Yongqiang c Theodore, N David d Alford, Terry L e Nastasi, Michael c

a University of Pittsburgh (United States)

b Kookmin University (South Korea)

c LOS ALAMOS NATIONAL LABORATORY (United States)

d FREESCALE SEMICONDUCTOR INC (United States)

e Arizona State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS/CRYSTALLINE INTERFACE; CRYSTALLIZATION RATES; ESCAPE RATE; FILM DENSITY; ION IRRADIATION; MIGRATION MECHANISMS; NUCLEAR ENERGY DEPOSITION; ORGANIC COMPONENTS; SOL-GEL TIO; TIO;

EPITAXIAL FILMS; GELS; IONS; IRRADIATION; SOL-GEL PROCESS; SOL-GELS; SOLS;

EPITAXIAL GROWTH;

EID: 79953025346 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-5985-5 Document Type: Article

Times cited : (2)

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