O K-energy loss near-edge structure change induced by tantalum impurity in monoclinic hafnium oxide

Journal of Applied Physics

Volumn 109, Issue 5, 2011, Pages

  Yang, Mino ^a,b   Baik, Hionsuck ^c   Ivanovskaya, Viktoria ^d   Colliex, Christian ^d   Benayad, Anass ^a  

^a SAMSUNG Electronics   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

^d UNIVERSITÉ PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CATION DISTRIBUTIONS; COMMON FEATURES; DENSITY FUNCTIONAL THEORY CALCULATIONS; ENERGY LOSS NEAR EDGE STRUCTURE; MONOCLINIC HFO; NON-DOPED; OXYGEN ATOM; RADIO-FREQUENCY MAGNETRON CO-SPUTTERING; SPECTRAL DIFFERENCES; VIENNA AB-INITIO SIMULATION PACKAGES;

CALCULATIONS; CRYSTAL DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; HAFNIUM; HAFNIUM OXIDES; MAGNETRONS; OXYGEN; TANTALUM; TANTALUM OXIDES;

DOPING (ADDITIVES);

EID: 79952995922     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3553410     Document Type: Article

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