Sintered NbO powders for electronic device applications

Journal of Physical Chemistry C

Volumn 115, Issue 11, 2011, Pages 4879-4886

  Nico, C ^a   Soares, M R N ^a   Rodrigues, J ^a   Matos, M ^b   Monteiro, R ^b   Graca M P F ^a   Valente, M A ^a   Costa, F M ^a   Monteiro, T ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b KEMET   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION MEASUREMENTS; BAND GAPS; CRYSTALLINE PHASIS; DIELECTRIC CONSTANTS; DIELECTRICAL PROPERTIES; ELECTRONIC DEVICE; LOW FREQUENCY RANGE; OPTICAL CHARACTERIZATION; ROOM TEMPERATURE; SINTERING TEMPERATURES; STRUCTURAL CHARACTERISTICS; STRUCTURAL CHARACTERIZATION; WIDE BAND GAP; X-RAY DIFFRACTION MEASUREMENTS;

ENERGY GAP; NIOBIUM; POWDERS; RAMAN SPECTROSCOPY; SINTERING; THERMOELECTRIC EQUIPMENT; X RAY DIFFRACTION;

NIOBIUM OXIDE;

EID: 79952853052     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp110672u     Document Type: Article

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