메뉴 건너뛰기




Volumn 11, Issue 1, 2011, Pages 60-65

Influence of octadecyltrichlorosilane surface modification on electrical properties of polymer thin-film transistors studied by capacitancevoltage analysis

Author keywords

Capacitancevoltage characteristics; poly(3 hexylthiophene) (P3HT); polymer thin film transistors (PTFTs); surface modification

Indexed keywords

CAPACITANCE VOLTAGE; CAPACITANCE VOLTAGE CHARACTERISTIC; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; FREQUENCY-DEPENDENT; LOCALIZED CHARGE; OCTADECYLTRICHLOROSILANE; ORDERS OF MAGNITUDE; PERFORMANCE IMPROVEMENTS; POLY (3-HEXYLTHIOPHENE); POLY(3-HEXYLTHIOPHENE) (P3HT); POLYMER BULK; SATURATION REGION; SURFACE MODIFICATION; TRAPPING EFFECTS; UNDER GATE;

EID: 79952848744     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2010.2072992     Document Type: Article
Times cited : (3)

References (17)
  • 1
    • 36048949358 scopus 로고    scopus 로고
    • Printable all-organic electrochromic active-matrix displays
    • DOI 10.1002/adfm.200601241
    • P. Andersson, R. Forchheimer, P. Tehrani, and M. Berggren, "Printable all-organic electrochromic active-matrix displays," Adv. Funct. Mater., vol. 17, no. 16, pp. 3074-3082, Nov. 2007. (Pubitemid 350099936)
    • (2007) Advanced Functional Materials , vol.17 , Issue.16 , pp. 3074-3082
    • Andersson, P.1    Forchheimer, R.2    Tehrani, P.3    Berggren, M.4
  • 3
    • 0032511040 scopus 로고    scopus 로고
    • Integrated optoelectronic devices based on conjugated polymers
    • DOI 10.1126/science.280.5370.1741
    • H. Sirringhaus, N. Tessler, and R. H. Friend, "Integrated optoelectronic devices based on conjugated polymers," Science, vol. 280, no. 5370, pp. 1741-1744, Jun. 1998. (Pubitemid 28283495)
    • (1998) Science , vol.280 , Issue.5370 , pp. 1741-1744
    • Sirringhaus, H.1    Tessler, N.2    Friend, R.H.3
  • 4
    • 9944257102 scopus 로고    scopus 로고
    • High capacitance organic field-effect transistors with modified gate insulator surface
    • Nov.
    • L. A. Majewski, R. Schroeder, M. Grell, P. A. Glarvey, and M. L. Turner, "High capacitance organic field-effect transistors with modified gate insulator surface," J. Appl. Phys., vol. 96, no. 10, pp. 5781-5787, Nov. 2004.
    • (2004) J. Appl. Phys. , vol.96 , Issue.10 , pp. 5781-5787
    • Majewski, L.A.1    Schroeder, R.2    Grell, M.3    Glarvey, P.A.4    Turner, M.L.5
  • 5
    • 0037355810 scopus 로고    scopus 로고
    • Low-k insulators as the choice of dielectrics in organic field-effect transistors
    • Mar.
    • J. Veres, S. D. Ogier, S. W. Leeming, D. C. Cupertino, and S. M. Khaffaf, "Low-k insulators as the choice of dielectrics in organic field-effect transistors," Adv. Funct. Mater., vol. 13, no. 3, pp. 199-204, Mar. 2003.
    • (2003) Adv. Funct. Mater. , vol.13 , Issue.3 , pp. 199-204
    • Veres, J.1    Ogier, S.D.2    Leeming, S.W.3    Cupertino, D.C.4    Khaffaf, S.M.5
  • 6
    • 23044480892 scopus 로고    scopus 로고
    • Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics
    • DOI 10.1002/adma.200500517
    • A. Facchetti, M. H. Yoon, and T. J. Marks, "Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics," Adv. Mater., vol. 17, no. 14, pp. 1705-1725, Jul. 2005. (Pubitemid 41055422)
    • (2005) Advanced Materials , vol.17 , Issue.14 , pp. 1705-1725
    • Facchetti, A.1    Yoon, M.-H.2    Marks, T.J.3
  • 8
    • 53149141351 scopus 로고    scopus 로고
    • Effect of the silanization and annealing on the morphology of thin poly(3-hexylthiophene) (P3HT) layer on silicon oxide
    • Oct.
    • G. Scavia, W. Porzio, S. Destri, L. Barba, G. Arrighetti, S. Milita, L. Fumagalli, D. Natali, and M. Sampietro, "Effect of the silanization and annealing on the morphology of thin poly(3-hexylthiophene) (P3HT) layer on silicon oxide," Surf. Sci., vol. 602, no. 19, pp. 3106-3115, Oct. 2008.
    • (2008) Surf. Sci. , vol.602 , Issue.19 , pp. 3106-3115
    • Scavia, G.1    Porzio, W.2    Destri, S.3    Barba, L.4    Arrighetti, G.5    Milita, S.6    Fumagalli, L.7    Natali, D.8    Sampietro, M.9
  • 9
    • 33748768188 scopus 로고    scopus 로고
    • Differences of interface and bulk transport properties in polymer field-effect devices
    • DOI 10.1016/j.orgel.2006.03.005, PII S1566119906000541
    • S. Grecu, M. Roggenbuck, A. Opitz, and W. Brutting, "Differences of interface and bulk transport properties in polymer field-effect devices," Org. Electron., vol. 7, no. 5, pp. 276-286, Oct. 2006. (Pubitemid 44416336)
    • (2006) Organic Electronics: physics, materials, applications , vol.7 , Issue.5 , pp. 276-286
    • Grecu, S.1    Roggenbuck, M.2    Opitz, A.3    Brutting, W.4
  • 10
    • 31544464957 scopus 로고    scopus 로고
    • Interfacial charge phenomena at the semiconductor/gate insulator interface in organic field effect transistors
    • DOI 10.1016/j.tsf.2005.07.028, PII S004060900500828X, Proceedings of the Sixth International Conference on Nano-Molecular Electronics (ICNME 2004)
    • E. Itoh and K. Miyairi, "Interfacial charge phenomena at the semiconductor/gate insulator interface in organic field effect transistors," Thin Solid Films, vol. 499, no. 1/2, pp. 95-103, Mar. 2006. (Pubitemid 43165552)
    • (2006) Thin Solid Films , vol.499 , Issue.1-2 , pp. 95-103
    • Itoh, E.1    Miyairi, K.2
  • 11
    • 20544465346 scopus 로고    scopus 로고
    • Organic field-effect transistors with ultrathin modified gate insulator
    • DOI 10.1016/j.synthmet.2005.04.006, PII S0379677905001475
    • L. A. Majewski and M. Grell, "Organic field-effect transistors with ultrathin modified gate insulator," Synth. Met., vol. 151, no. 2, pp. 175-179, Jun. 2005. (Pubitemid 40845001)
    • (2005) Synthetic Metals , vol.151 , Issue.2 , pp. 175-179
    • Majewski, L.A.1    Grell, M.2
  • 12
    • 0035844437 scopus 로고    scopus 로고
    • Frequency behavior and the Mott-Schottky analysis in poly(3-hexyl thiophene) metal-insulator-semiconductor diodes
    • DOI 10.1063/1.1378803
    • E. J. Meijer, A. V. G. Mangnus, C. M. Hart, D. M. de Leeuw, and T. M. Klapwijk, "Frequency behavior and the Mott-Schottky analysis in poly(3-hexyl thiophene) metal-insulator-semiconductor diodes," Appl. Phys. Lett., vol. 78, no. 24, pp. 3902-3904, Jun. 2001. (Pubitemid 33639073)
    • (2001) Applied Physics Letters , vol.78 , Issue.24 , pp. 3902-3904
    • Meijer, E.J.1    Mangnus, A.V.G.2    Hart, C.M.3    De Leeuw, D.M.4    Klapwijk, T.M.5
  • 14
    • 29144432762 scopus 로고    scopus 로고
    • Hysteresis in organic field-effect devices: Simulated effects due to trap recharging
    • Dec.
    • T. Lindner, G. Paasch, and S. Scheinert, "Hysteresis in organic field-effect devices: Simulated effects due to trap recharging," J. Appl. Phys., vol. 98, no. 11, p. 114 505, Dec. 2005.
    • (2005) J. Appl. Phys. , vol.98 , Issue.11 , pp. 114-505
    • Lindner, T.1    Paasch, G.2    Scheinert, S.3
  • 16
    • 33646570801 scopus 로고    scopus 로고
    • Characterization of MOS structures based on poly (3,31-dialkyl- quaterthiophene)
    • DOI 10.1109/TED.2005.856172
    • N. Zhao, O. Marinov, G. A. Botton, M. J. Deen, B. S. Ong, Y. Wu, and P. Liu, "Characterization of MOS structures based on poly(3, 31-dialkyl-quaterthiophene)," IEEE Trans. Electron Devices, vol. 52, no. 10, pp. 2150-2156, Oct. 2005. (Pubitemid 46446452)
    • (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.10 , pp. 2150-2156
    • Zhao, N.1    Marinov, O.2    Botton, G.A.3    Deen, M.J.4    Ong, B.S.5    Wu, Y.6    Liu, P.7
  • 17
    • 0042090669 scopus 로고    scopus 로고
    • Analyzes of field effect devices based on poly (3-octylthiophene)
    • Sep.
    • S. Scheinert and W. Schliefke, "Analyzes of field effect devices based on poly (3-octylthiophene)," Synth. Met., vol. 139, no. 2, pp. 501-509, Sep. 2003.
    • (2003) Synth. Met. , vol.139 , Issue.2 , pp. 501-509
    • Scheinert, S.1    Schliefke, W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.