Effect of doping on the optical and structural properties of ZnO thin films prepared by RF diode sputtering

ECS Transactions

Volumn 25, Issue 12, 2009, Pages 65-72

  Shtereva, K S ^a,b   Tvarozek, V ^b   Netrvalova, M ^c   Sutta, P ^c   Novotny, I ^b   Pullmannova, A ^b  

^a UNIVERSITY OF RUSE   (Bulgaria)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM COATINGS; ALUMINUM COMPOUNDS; ALUMINUM METALLOGRAPHY; CRYSTALLITE SIZE; ENERGY GAP; II-VI SEMICONDUCTORS; METALLIC FILMS; NANOCRYSTALLINE MATERIALS; OXIDE FILMS; OXIDE MINERALS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

CRYSTALLINE STRUCTURE; EFFECT OF DOPING; NITROGEN-DOPED; NITROGEN-DOPED FILMS; PREFERENTIAL ORIENTATION; RF DIODE SPUTTERING; TRANSMITTANCE SPECTRA; WAVELENGTH RANGES;

THIN FILMS;

EID: 79952770022     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3238208     Document Type: Conference Paper

References (13)

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