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Volumn 3, Issue 2, 2011, Pages 289-293

5 nm-thick (AlCrTaTiZrRu)N0.5 multi-component barrier layer with high diffusion resistance for Cu interconnects

Author keywords

Diffusion Barrier; High Entropy Alloy; Interconnect

Indexed keywords

AMORPHOUS STRUCTURES; BARRIER LAYERS; CU DIFFUSION; CU FILMS; CU-INTERCONNECTS; DIFFUSION RESISTANCE; ELECTRICAL RESISTANCES; HIGH ENTROPY ALLOYS; HIGH TEMPERATURE; INTER-DIFFUSION; INTERCONNECT; METALLIC ELEMENTS; MULTICOMPONENTS; SI SUBSTRATES;

EID: 79952724270     PISSN: 19414900     EISSN: 19414919     Source Type: Journal    
DOI: 10.1166/nnl.2011.1155     Document Type: Conference Paper
Times cited : (19)

References (17)
  • 1
    • 4644368968 scopus 로고    scopus 로고
    • edited by K., Wetzig and C. M. Schneider, Wiley-VCH GmbH and Co. KGaA, Weinheim, Germany
    • E. Zschech, Metal Based Thin Films for Electronics, edited by K. Wetzig and C. M. Schneider, Wiley-VCH GmbH and Co. KGaA, Weinheim, Germany (2003), p. 222.
    • (2003) Metal Based Thin Films for Electronics , pp. 222
    • Zschech, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.