A comparative study on different textured surfaces passivated with amorphous silicon

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 747-750

  Montesdeoca Santana, A ^a,b   Ziegler, J ^b   Lindekugel, S ^c   Jimenez Rodriguez E ^a   Keipert Colberg, S ^b   Muller S ^b   Krause, C ^b   Borchert, D ^b   Guerrero Lemus, R ^a,d  

^a UNIVERSIDAD DE LA LAGUNA   (Spain)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS   (Germany)

^c FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^d Foundation for Applied Economic Research FEDEA   (Spain)

Author keywords

Amorphous silicon; Crystalline silicon; Surface passivation; Texturization

Indexed keywords

A-SI:H; AMORPHOUS SILICON LAYERS; CARBONATE SOLUTIONS; COMPARATIVE STUDIES; CONDUCTANCE DECAYS; CRYSTALLINE SILICONS; DEPOSITION REGIMES; HETEROJUNCTION SOLAR CELLS; LIGHT-TRAPPING; MINORITY CARRIER LIFETIMES; QUASI-STEADY STATE; SILICON SURFACES; SURFACE PASSIVATION; SURFACE TOPOLOGY; TEXTURED SURFACE; TEXTURIZATION; THIN LAYERS; WET CHEMICALS;

ATOMIC FORCE MICROSCOPY; CARRIER LIFETIME; CRYSTALLINE MATERIALS; DEPOSITION; HETEROJUNCTIONS; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE MORPHOLOGY;

AMORPHOUS SILICON;

EID: 79952646233     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000234     Document Type: Article

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