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Volumn 115, Issue 5, 2011, Pages 1415-1421

Structure and photoluminescence of pure and indium-doped ZnTe microstructures

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BAND-EDGE EMISSIONS; DONOR-ACCEPTOR PAIRS; EMISSION CHANGE; FUTURE APPLICATIONS; GREEN LIGHT; HIGH-PURITY; INFRARED LIGHT; MULTI-LAYERED; PERIODICAL STRUCTURE; SEMICONDUCTOR MICROSTRUCTURES; STATE TRANSITIONS; THERMAL EVAPORATION METHOD;

EID: 79952634630     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp1069237     Document Type: Article
Times cited : (35)

References (40)
  • 24
    • 79952692235 scopus 로고    scopus 로고
    • http://www.springermaterials.com/pdfs/10.1007/978-3-540-74392-7-211.pdf
  • 37
    • 0017215199 scopus 로고
    • 10.1002/pssb.2220780222
    • Pässler, R. Phys. Status Solidi B 1976, 78, 625-635 10.1002/pssb.2220780222
    • (1976) Phys. Status Solidi B , vol.78 , pp. 625-635
    • Pässler, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.