Band-filling of solution-synthesized CdS nanowires

ACS Nano

Volumn 2, Issue 2, 2008, Pages 357-367

  Puthussery, James ^a   Lan, Aidong ^a   Kosel, Thomas H ^b   Kuno, Masaru ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b University of Notre Dame   (United States)

Author keywords

Auger; Band edge emission; Band gap renormalization; Band filling; CdS; Many body; Nanowire; One dimensional; Solution liquid solid; Transient differential absorption spectroscopy

Indexed keywords

ABSORPTION; CRYSTAL STRUCTURE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; PHOTOLUMINESCENCE; QUANTUM YIELD; SYNTHESIS (CHEMICAL);

BAND EDGE EMISSION; BAND-FILLING; TRANSIENT DIFFERENTIAL ABSORPTION SPECTROSCOPY;

CADMIUM COMPOUNDS;

CADMIUM DERIVATIVE; CADMIUM SELENIDE; NANOMATERIAL; SELENIUM DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SOLUTION AND SOLUBILITY; SURFACE PROPERTY; ULTRASTRUCTURE;

CADMIUM COMPOUNDS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SELENIUM COMPOUNDS; SEMICONDUCTORS; SOLUTIONS; SURFACE PROPERTIES;

EID: 42549147067     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn700270a     Document Type: Article

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