One-dimensional model of the equiaxed grain formation in multi-crystalline silicon

Journal of Crystal Growth

Volumn 319, Issue 1, 2011, Pages 106-113

  Beaudhuin, M ^a,c   Duffar, T ^a   Lemiti, M ^b   Zaidat, K ^a  

^a UNIV GRENOBLE ALPES   (France)

^b UNIVERSITÉ DE LYON   (France)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

A1. Directional solidification; A1. Growth model; A1. Segregation; A1. Supersaturated solution; A2. Bridgman technique; B2. Semiconducting material

Indexed keywords

A1. GROWTH MODEL; A1. SEGREGATION; BRIDGMAN TECHNIQUES; DIRECTIONAL SOLIDIFICATION; SEMICONDUCTING MATERIALS; SUPERSATURATED SOLUTIONS;

CRYSTALLIZATION; INGOTS; LIQUIDS; MATHEMATICAL MODELS; NUCLEATION; PHASE INTERFACES; PRECIPITATES; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SOLIDIFICATION; TEXTURES; THERMOANALYSIS; THREE DIMENSIONAL; THREE DIMENSIONAL COMPUTER GRAPHICS;

SILICON;

EID: 79952621544     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.02.001     Document Type: Article

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