On the twinning occurrence in bulk semiconductor crystal growth

Scripta Materialia

Volumn 62, Issue 12, 2010, Pages 955-960

  Duffar, Thierry ^a   Nadri, Amal ^a  

^a UNIV GRENOBLE ALPES   (France)

Author keywords

Czochralski technique; Directional solidification; Facets; Semiconductors; Twinning

Indexed keywords

BULK SEMICONDUCTORS; CZOCHRALSKI TECHNIQUE; DIRECTIONAL SOLIDIFICATION; EXPERIMENTAL OBSERVATION; GRAIN ORIENTATION; MULTI-CRYSTALLINE SILICON; NEW MODEL; SEMICONDUCTOR CRYSTAL GROWTH; SOLID-LIQUID; TRIPLE LINES;

CRYSTALLIZATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MELTING; METAL CASTINGS; PHASE INTERFACES; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SOLIDIFICATION;

TWINNING;

EID: 77950370670     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2010.02.034     Document Type: Article

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