Ultrafast atomic layer deposition of alumina layers for solar cell passivation

ECS Transactions

Volumn 33, Issue 2, 2010, Pages 419-427

  Poodt, P ^a   Lankhorst, A ^a   Roozeboom, F ^a,b   Tiba, V ^a   Spee, K ^c   Maas, D ^a   Vermeer, A ^a,d  

^a TNO   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c HOLST CENTRE   (Netherlands)

^d Solaytec   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMS; DEPOSITION RATES; PASSIVATION; SILICON SOLAR CELLS; SILICON WAFERS;

ALUMINA LAYERS; HALF REACTIONS; HIGH THROUGHPUT; KINETIC MODELING; SOLAR-CELL APPLICATIONS; SPATIAL SEPARATION; ULTRA-FAST;

ATOMIC LAYER DEPOSITION;

EID: 79952563668     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3485278     Document Type: Conference Paper

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