Growth of silicon oxide nanowires at low temperature using tin hydroxide catalyst

Journal of Crystal Growth

Volumn 320, Issue 1, 2011, Pages 55-62

  Carole, Davy ^a   Brioude, Arnaud ^a   Pillonnet, Anne ^a   Lorenzzi, Jean ^a   Kim Hak, Olivier ^a   Cauwet, Franois ^a   Ferro, Gabriel ^a  

^a UNIVERSITÉ LYON 1   (France)

Author keywords

A2. Growth from melt; A3. Liquid phase epitaxy; B1. Oxides; B2. Silicon oxide

Indexed keywords

A3. LIQUID PHASE EPITAXY; B1. OXIDES; B2. SILICON OXIDE; CATALYST REDUCTION; DROP SIZE; GROWTH FROM MELTS; GROWTH MECHANISMS; GROWTH TIME; IN-SITU; LOW TEMPERATURES; MICRO-TUBES; MORPHOLOGY SELECTIONS; OXIDE CATALYSTS; OXYGEN DEFICIENCY; PL MEASUREMENTS; SHAPE AND SIZE; SIGNIFICANT IMPACTS; SILICON OXIDE NANOWIRES; TIN HYDROXIDES; VERY LOW TEMPERATURES;

CATALYSTS; EPITAXIAL GROWTH; LIQUIDS; MORPHOLOGY; NANOWIRES; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; TIN; TIN OXIDES;

SILICON OXIDES;

EID: 79952532790     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.01.104     Document Type: Article

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