Bulk preparation of Si-SiOx hierarchical structures: High-density radially oriented amorphous silica nanowires on a single-crystal silicon nanocore

Angewandte Chemie - International Edition

Volumn 44, Issue 42, 2005, Pages 6934-6937

  Wang, Hui ^a,c   Zhang, Xiaohong ^a   Meng, Xiangmin ^a   Zhou, Shaomin ^a   Wu, Shikang ^a   Shi, Wensheng ^a   Lee, Shuittong ^b  

^a TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Crystal growth; Luminescence; Materials science; Nanostructures; Silicon

Indexed keywords

CRYSTAL GROWTH; LUMINESCENCE; MATERIALS SCIENCE; NANOSTRUCTURED MATERIALS;

NANOCORE; SILICA NANOWIRES; THERMAL EVAPORATION;

SINGLE CRYSTALS;

NANOMATERIAL; NANOTUBE; SILICON; SILICON DIOXIDE; TIN;

ARTICLE; CATALYSIS; CHEMISTRY; CRYSTALLIZATION; PARTICLE SIZE; SYNTHESIS; TEMPERATURE; ULTRASTRUCTURE; X RAY DIFFRACTION;

CATALYSIS; CRYSTALLIZATION; NANOSTRUCTURES; NANOTUBES; PARTICLE SIZE; SILICON; SILICON DIOXIDE; TEMPERATURE; TIN; X-RAY DIFFRACTION;

EID: 27544480831     PISSN: 14337851     EISSN: None     Source Type: Journal    
DOI: 10.1002/anie.200501960     Document Type: Article

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