Impact of "terminal effect" on Cu electrochemical deposition: Filling capability for different metallization options

Microelectronic Engineering

Volumn 88, Issue 5, 2011, Pages 754-759

  Armini, Silvia ^a   Tokei, Zsolt ^a   Volders, Henny ^a   El Mekki, Zaid ^a   Radisic, Aleksandar ^a   Beyer, Gerald ^a   Ruythooren, Wouter ^a   Vereecken, Philippe M ^a  

^a IMEC   (Belgium)

Author keywords

Copper; Direct on barrier plating; Metallization options; Terminal effect

Indexed keywords

300 MM WAFERS; CRITICAL ISSUES; CU-BASED; DIRECT ON BARRIER PLATING; DUAL DAMASCENE; ELECTROCHEMICAL DEPOSITION; FEATURE SIZES; INTEGRATION SCHEME; METALLIZATIONS; PHYSICAL VAPOR DEPOSITED; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; TERMINAL EFFECT; TERMINAL EFFECTS;

ASPECT RATIO; ATOMIC LAYER DEPOSITION; COPPER; ELECTRIC RESISTANCE; ELECTROCHEMICAL SENSORS; ELECTROCHEMISTRY; ELECTRODEPOSITION; METALLIZING; PLASMA DEPOSITION; REDUCTION;

VAPOR DEPOSITION;

EID: 79952488234     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.08.013     Document Type: Conference Paper

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