Effects of annealing temperatures on optical and electrical properties of vacuum evaporated Ga15Se77In8 chalcogenide thin films

Vacuum

Volumn 85, Issue 9, 2011, Pages 892-897

  Al Agel, F A ^a  

^a KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

Author keywords

Activation energy; Chalcogenide glasses; Crystallization; Optical band gap

Indexed keywords

ABSORPTION COEFFICIENTS; ANNEALING TEMPERATURES; BAND EDGE; CHALCOGENIDE GLASS; CHALCOGENIDE GLASSES; CHALCOGENIDE THIN FILMS; CRYSTALLINE STATE; CRYSTALLIZATION TEMPERATURE; DC CONDUCTIVITY; DIELECTRIC CONSTANTS; DIRECT TRANSITION; EXTINCTION COEFFICIENTS; IMAGINARY PARTS; LOCALIZED STATE; OPTICAL ABSORPTION; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL BANDS; PHOTON ENERGY; REFLECTION SPECTRA; TEMPERATURE RANGE; THERMALLY-ASSISTED TUNNELING;

ABSORPTION; ACTIVATION ENERGY; AMORPHOUS FILMS; ANNEALING; CRYSTALLINE MATERIALS; CRYSTALLIZATION; ELECTRIC PROPERTIES; ENERGY GAP; GALLIUM; GLASS; GLASS TRANSITION; LIGHT REFRACTION; OPTICAL BAND GAPS; OPTICAL CONSTANTS; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS;

PHASE CHANGE MEMORY;

EID: 79952442330     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2011.01.006     Document Type: Article

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