Thermal-induced gradually changes in the optical properties of amorphous GeSe2 film prepared by PLD

Physica B: Condensed Matter

Volumn 404, Issue 20, 2009, Pages 3397-3400

  Pan, R K ^a,b   Tao, H Z ^a   Zang, H C ^a   Zhang, T J ^b   Zhao, X J ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b HUBEI UNIVERSITY   (China)

Author keywords

GeSe2 film; Optical properties; Pulsed laser deposition; Thermal bleaching

Indexed keywords

ABSORPTION EDGES; ANNEALED FILMS; ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; DIRECT TRANSITION; GESE2 FILM; HOMOPOLAR BONDS; INDEX OF REFRACTION; OPTICAL TRANSMISSION SPECTRUM; POROUS STRUCTURES; PULSED-LASER DEPOSITION TECHNIQUE; RAMAN SPECTRA; SHORT WAVELENGTHS; THERMAL-BLEACHING; THICKNESS OF THE FILM;

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; ANNEALING; BLEACHING; CLEANING; FILM PREPARATION; LASERS; LIGHT TRANSMISSION; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; REFRACTIVE INDEX; SEMICONDUCTOR LASERS;

OPTICAL FILMS;

EID: 71749111895     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.05.021     Document Type: Article

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