Effect of Ag incorporation on electrical and optical properties of Se-S chalcogenide thin films

Physica B: Condensed Matter

Volumn 404, Issue 8-11, 2009, Pages 1415-1419

  Khan, Shamshad A ^a   Al Hazmi, F S ^a   Al Sanosi, Ali M ^a   Faidah, A S ^a   Yaghmour, S J ^a   Al Ghamdi, A A ^a  

^a KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

Author keywords

Absorption coefficient; Activation energy optical band gap; Chalcogenide glasses; dc Conductivity; Thin films

Indexed keywords

ABSORPTION COEFFICIENT; BAND EDGES; BINARY SYSTEMS; CHALCOGENIDE GLASSES; CHALCOGENIDE THIN FILMS; COMPOSITIONAL DEPENDENCES; CONCENTRATION OF; DC CONDUCTIVITY; DC ELECTRICAL CONDUCTIVITIES; ELECTRICAL AND OPTICAL PROPERTIES; EXPERIMENTAL DATUM; EXTINCTION COEFFICIENTS (K); LOCALIZED STATE; PHOTON ENERGIES; S SYSTEMS; SILVER CONCENTRATIONS; SILVER CONTENTS; SPECTRAL RANGES; THERMALLY-ASSISTED TUNNELING; VACUUM EVAPORATION TECHNIQUES;

ABSORPTION; ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; ENERGY GAP; GLASS; OPTICAL BAND GAPS; OPTICAL CONDUCTIVITY; OPTICAL PROPERTIES; ORGANIC POLYMERS; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS; VACUUM EVAPORATION;

SILVER;

EID: 64149092199     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.12.036     Document Type: Article

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