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Electrochemistry Communications

Volumn 13, Issue 4, 2011, Pages 350-354

Interfacial and electrical properties of solution processed p-TiO 2 in heterojunction devices

(5) Das, Soumen a Kim, Jin Hwan a Choi, Han Seok a Park, Yong Kyu a Hahn, Yoon Bong a

a Chonbuk National University (South Korea)

Author keywords

Heterojunction devices; Interfacial and electrical properties; Ni2+ doped TiO2; Wet chemical synthesis

Indexed keywords

CHEMICAL ENVIRONMENT; CURRENT-VOLTAGE RELATIONS; DOPED-TIO; ELECTRICAL PROPERTY; HETEROJUNCTION DEVICES; HOLE DIFFUSION; NI2+-DOPED TIO2; P-TYPE CONDUCTIVITY; SI FIELD-EFFECT TRANSISTOR; SILICON NANOWIRE FETS; SUBTHRESHOLD SWING; TI ATOMS; TIO; WET CHEMICAL SYNTHESIS;

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; HOLE MOBILITY; MESFET DEVICES; NANOWIRES; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRIC PROPERTIES;

EID: 79952362079 PISSN: 13882481 EISSN: None Source Type: Journal
DOI: 10.1016/j.elecom.2011.01.022 Document Type: Article

Times cited : (9)

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