Ultralong zinc-blende ZnS nanowires grown on polar C face of 6H-SiC substrates at low temperatures by metalorganic chemical vapor deposition

Materials Research Bulletin

Volumn 46, Issue 4, 2011, Pages 501-504

  Lei, M ^a   Li, P G ^a   Li, L H ^b   Tang, W H ^a  

^a ZHEJIANG SCI TECH UNIVERSITY   (China)

^b UNIVERSITY OF TENNESSEE AT MARTIN   (United States)

Author keywords

A. Nanostructures; A. Semiconductors; B. Luminescence; B. Vapor deposition

Indexed keywords

A. NANOSTRUCTURES; A. SEMICONDUCTORS; B. LUMINESCENCE; B. VAPOR DEPOSITION; BLUE EMISSION; BULK DEFECTS; CRYSTALLINE NANOWIRES; CRYSTALLINE NATURE; GREEN EMISSIONS; HIGH PURITY; LOW TEMPERATURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; SIC SUBSTRATES; VLS GROWTH; ZINC VACANCY; ZINC-BLENDE;

CRYSTALLINE MATERIALS; DEFECTS; GOLD COATINGS; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTOR GROWTH; SILICON; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; SULFUR; VAPOR DEPOSITION; ZINC; ZINC SULFIDE;

NANOWIRES;

EID: 79952128874     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2011.01.006     Document Type: Article

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