High-performance piezoresistive MEMS strain sensor with low thermal sensitivity

Sensors

Volumn 11, Issue 2, 2011, Pages 1819-1846

  Mohammed, Ahmed A S ^a   Moussa, Walied A ^a   Lou, Edmond ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

MEMS; Piezoresistive; Silicon; Strain sensor

Indexed keywords

SILICON;

ADHESION; ARTICLE; CALIBRATION; ELASTICITY; ELECTRONICS; EQUIPMENT DESIGN; FINITE ELEMENT ANALYSIS; IMPEDANCE; INSTRUMENTATION; MATERIALS TESTING; MECHANICAL STRESS; MICROELECTROMECHANICAL SYSTEM; MICROTECHNOLOGY; SIGNAL PROCESSING; STATISTICS; TEMPERATURE;

ADHESIVENESS; CALIBRATION; ELASTICITY; ELECTRIC IMPEDANCE; ELECTRONICS; EQUIPMENT DESIGN; FINITE ELEMENT ANALYSIS; MATERIALS TESTING; MICRO-ELECTRICAL-MECHANICAL SYSTEMS; MICROTECHNOLOGY; SIGNAL PROCESSING, COMPUTER-ASSISTED; SILICON; STATISTICS AS TOPIC; STRESS, MECHANICAL; TEMPERATURE;

EID: 79952095989     PISSN: 14248220     EISSN: None     Source Type: Journal    
DOI: 10.3390/s110201819     Document Type: Article

References (45)

1. Kloeck, B.; Rooij, N.F.d. Mechanical snsors. In Semiconductor Sensors; Sze, S.M., Ed.; John Wiley Sons: New York, NY, USA, 1994; pp. 153-199.
2. Kovacs, G.T.A. Micromachined Transducers: Sourcebook; McGraw-Hill: New York, NY, USA, 1998; p. 911.
3. Sze, S. Semiconductor Sensors; John Wiley Sons: New York, NY, USA, 1994.
4. Frazão, O.; Marques, L.; Marques, J.; Baptista, J.; Santos, J. Simple Sensing Head Geometry Using Fiber Bragg Gratings For Strain-Temperature Discrimination. Opt. Commun. 2007, 279, 68-71.
5. Li, X.; Zhao, C.; Lin, J.; Yuan, S. The Internal Strain of Three-Dimensional Braided Composites with Co-Braided FBG Sensors. Opt. Lasers Eng. 2007, 45, 819-826.
6. Tsuda, H.; Lee, J. Strain and Damage Monitoring of CFRP in Impact Loading Using a Fiber Bragg Grating Sensor System. Composites Sci. Technol. 2007, 67, 1353-1361.
7. Ko, W.; Young, D.; Guo, J.; Suster, M.; Kuo, H.; Chaimanonart, N. A High-Performance MEMS Capacitive Strain Sensing System. Sens. Actuat. A Phys. 2007, 133, 272-277.
8. Lin, J.; Walsh, K.; Jackson, D.; Aebersold, J.; Crain, M.; Naber, J.; Hnat, W. Development of Capacitive Pure Bending Strain Sensor for Wireless Spinal Fusion Monitoring. Sens. Actuat. A Phys. 2007, 138, 276-287.
9. Hu, N.; Fukunaga, H.; Matsumoto, S.; Yan, B.; Peng, X. An Efficient Approach for Identifying Impact Force Using Embedded Piezoelectric Sensors. Int. J. Impact Eng. 2007, 34, 1258-1271.
10. Mohammed, A.; Moussa, W. Design and Simulation of Electrostatically Driven Microresonator Using Piezoresistive Elements for Strain Measurements. Presented at IEEE Transactions, Proceedings of 2005 International Conference on MEMS, NANO and Smart Systems, Banff, Canada, 2005; pp. 444-448.
11. Cao, L.; Kim, T.; Mantell, S.; Polla, D. Simulation and Fabrication of Piezoresistive Membrane Type MEMS Strain Sensors. Sens. Actuat. A Phys. 2000, 80, 273-279.
12. Han, B.; Ou, J. Embedded Piezoresistive Cement-Based Stress/Strain Sensor. Sens. Actuat. A Phys. 2007, 138, 294-298.
13. Mohammed, A.A.S.; Moussa, W.A.; Lou, E. Mechanical Strain Measurements Using Semiconductor Piezoresistive Material. In Proceedings of 2006 International Conference on MEMS, NANO and Smart Systems, ICMENS, Cairo, Egypt, December 27-29, 2006; pp. 5-6.
14. Mohammed, A.A.S.; Moussa, W.A.; Lou, E. High Sensitivity MEMS Strain Sensor: Design and Simulation. Sensors 2008, 8, 2642-2661.
15. Mohammed, A.A.S.; Moussa, W.A.; Lou, E. Experimental Evaluation of a Novel Piezoresistive MEMS Strain Sensor. 2011, (In press).
16. Neumann, J.J.; Greve, D.W.; Oppenheim, I.J. Comparison of Piezoresistive and Capacitive Ultrasonic Transducers. Presented at Smart Structures and Materials 2004-Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems, San Diego, CA, USA, 2004.
17. Kon, S.; Oldham, K.; Horowitz, R. Piezoresistive and Piezoelectric MEMS Strain Sensors for Vibration Detection. Presented at Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2007, San Diego, CA, USA, 2007.
18. Rausch, J.; Heinickel, P.; Werthschuetzky, R.; Koegel, B.; Zogal, K.; Meissner, P. Experimental Comparison of Piezoresistive MEMS and Fiber Bragg Grating Strain Sensors. Presented at IEEE Sensors 2009 Conference-SENSORS 2009, Christchurch, New zealand, 2009.
19. Adams, E.N. Elastoresistance in p-type Ge and Si. Phys. Rev. 1954, 96, 803-804.
20. Boukabache, A.; Pons, P. Doping Effects on Thermal Behaviour of Silicon Resistor. Electron. Lett. 2002, 38, 342-343.
21. Brooks, H. Electrical Properties of Germanium and Silicon; Academic Press: New York, NY, USA, 1955.
22. Cho, C.H.; Jaeger, R.C.; Suhling, J.C. Characterization of the temperature dependence of the piezoresistive coefficients of silicon from-150°C to +125°C. IEEE Sens. J. 2008, 8, 1455-1468.
23. Kanda, Y. A Graphical Representation of the Piezoresistance Coefficients in Silicon. IEEE Trans. Electron. Dev. 1982, ED-29, 64-70.
24. Kanda, Y. Piezoresistance Effect of Silicon. Sens. Actuat. A Phys. 1991, 28, 83-91.
25. Kerr, D.; Milnes, A. Piezoresistance of Diffused Layers in Cubic Semiconductors. J. Appl. Phys. 1963, 34, 727-731.
26. Kozlovskiy, S.; Boiko, I. First-order Piezoresistance Coefficients in Silicon Crystals. Sens. Actuat. A Phys. 2006, 118, 33-43.
27. Morin, F.J.; Geballe, T.H.; Herring, C. Temperature Dependence of the Piezoresistance of High-Purity Silicon and Germanium. Phys. Rev. 1957, 10, 525-539.
28. Smith, C.S. Piezoresistance Effect in Germanium and Silicon. Phys. Rev. 1954, 94, 42-49.
29. Smith, C.S. Macroscopic Symmetry and Properties of Crystals. Solid State Phys. 1958, 6, 175-249.
30. Tufte, O.N.; Stelzer, E.L. Piezoresistive Properties of Silicon Diffused Layers. J. Appl. Phys. 1963, 34, 3322-3327.
31. Tufte, O.N.; Stelzer, E.L. Piezoresistive Properties of Heavily Doped n-Type Silicon. Phys. Rev. 1964, 133, A1705-A1716.
32. Yamada, K.; Nishihara, M.; Shimada, S.; Tanabe, M.; Shimazoe, M. Temperature Dependence of the Piezoresistance Effects of p-Type Silicon Diffused Layers. Electr. Eng. Jpn. 1983, 103, 8-16.
33. Peterson, K. Silicon as a Mechanical Material. Proc. IEEE 1982, 5, 420-457.
34. O'Mara, W.C.; Herring, R.B.; Hunt, L.P. Handbook of Semiconductor Silicon Technology; Noyes Publications: Park Ridge, NJ, USA, 1990.
35. Lindroos, V. Handbook of Silicon Based MEMS Materials and Technologies; ElSevier/William Andrew Applied Science Publishers: Waltham, MA, USA, 2010.
36. Lund, E.; Finstada, T.G. Design and Construction of a Four-Point Bending Based Set-up for Measurement of Piezoresistance in Semiconductors. Rev. Sci. Instrum. 2004, 75, 4960-4966.
37. Jaeger, R.C.; Suhling, J.C.; Carey, T.M.; Johnson, R.W. Off-axis Sensor Rosettes for Measurement of the Piezoresistive Coefficients of Silicon. In Proceedings of IEEE Transactions on Components, Hybrids and Manufacturing Technology, New York, NY, USA, December 1993; pp. 925-931.
38. American Society for Testing Materials. ASTM E 8/E 8M-08, Standard Test Methods for Tension Testing of Metallic Materials. 2008.
39. American Society for Testing Materials. ASTM E 251-92, Standard Test Methods for Performance Characteristics of Metallic Bonded Resistance Strain Gages. 1992 (R 2003).
40. Cho, C.H.; Jaeger, R.C.; Suhling, J.C.; Kang, Y.; Mian, A. Characterization of the Temperature Dependence of the Pressure Coefficient of n-and p-type Silicon Using Hydrostatic Testing. IEEE Sens. J. 2008, 8, 1455-1468.
41. Mohammed, A.A.S.; Moussa, W.A.; Lou, E. Optimization of Geometric Characteristics to Improve Sensing Performance of MEMS Piezoresistive Strain Sensors. Micromech. Microeng. 2010, 20, 015015.
42. Olszacki, M.; Maj, C.; Bahri, M.A.; Marrot, J.-C.; Boukabache, A.; Pons, P.; Napieralski, A. Experimental Verification of Temperature Coefficients of Resistance for Uniformly Doped P-type Resistors in SOI. J. Micromech. Microeng. 2010, 20, 064008.
43. Slattery, O.; O'Mahoney, D.; Sheehan, E.; Waldron, F. Sources of Variation in Piezoresistive Stress Sensor Measurements. IEEE Trans. Components Pack. Technol. 2004, 27, 81-86.
44. Harley, J.A.; Kenny, T.W. 1/f Noise Consideration for the Design and Process Optimization of Piezoresistive Cantilevers. Microelectromech. Syst. 2000, 9, 226-235.
45. Jaeger, R.C.; Suhling, J.C. Thermally Induced Errors in the Calibration and Application of Silicon Piezoresistive Stress Sensors. Adv. Electron. Pack. 1993, 4, 457-470.