Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

Journal of Micromechanics and Microengineering

Volumn 20, Issue 6, 2010, Pages

  Olszacki, M ^a,b,c   Maj, C ^a,b,c   Al Bahri, M ^a   Marrot, J C ^a   Boukabache, A ^a,b   Pons, P ^a   Napieralski, A ^c  

^a LAAS CNRS   (France)

^b UNIVERSITÉ PAUL SABATIER   (France)

^c LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; DOPED SILICON; DOPING PROFILES; DOPING RANGE; EXPERIMENTAL DATA; EXPERIMENTAL VERIFICATION; FIRST-ORDER; MOBILITY MODEL; P-TYPE; PIEZORESISTIVE PRESSURE SENSORS; SECOND ORDERS; TEMPERATURE COEFFICIENTS OF RESISTANCE; TEMPERATURE IMPACT; TEST STRUCTURE; THICK SOI;

IMPACT RESISTANCE; RESISTORS; SILICON WAFERS;

DOPING (ADDITIVES);

EID: 78650881420     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/6/064008     Document Type: Article

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