Doping effects on thermal behaviour of silicon resistor

Electronics Letters

Volumn 38, Issue 7, 2002, Pages 342-343

  Boukabache, A ^a   Pons, P ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; HOLE MOBILITY; MATHEMATICAL MODELS; RESISTORS; SEMICONDUCTING SILICON; TEMPERATURE;

DOPING EFFECTS; SILICON RESISTOR; THERMAL COEFFICIENTS;

SEMICONDUCTOR DOPING;

EID: 0037187737     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020221     Document Type: Article

References (6)

1. A unified mobility model for device simulation - I. Model equations and concentration dependence
2. Electron and hole mobilities in silicon as a function of concentration and temperature
3. Carrier mobilities in silicon semi-empirically related to temperature doping and injection level
4. Simulation for low temperature coefficient design of piezoresistive and Hall sensors
5. Characterisation and modelling of the mismatch of TCRs and their effects on the drift of the offset voltage of piezoresistive pressure sensors
6. Temperature coefficient of resistivity of silicon and germanium near room temperature