Measurement of the mean electron-hole pair ionization energy in 4H SiC

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Chandrashekhar, M V S ^a   Thomas, Christopher I ^a   Spencer, Michael G ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARE SEMICONDUCTOR SURFACE; ELECTRON BOMBARDMENT; ELECTRONHOLE PAIR IONIZATION ENERGY; SCANNING ELECTRON MICROSCOPE;

BACKSCATTERING; COMPUTER SIMULATION; IMPACT IONIZATION; IONIZATION; MONTE CARLO METHODS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS;

SILICON CARBIDE;

EID: 33746651811     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2243799     Document Type: Article

References (11)

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