Demonstration of a 4H SiC betavoltaic nuclear battery based on schottky barrier diode

Chinese Physics Letters

Volumn 25, Issue 10, 2008, Pages 3798-3800

  Qiao, Da Yong ^a   Yuan, Wei Zheng ^a   Gao, Peng ^a   Yao, Xian Wang ^a   Zang, Bo ^a   Zhang, Lin ^b   Guo, Hui ^b   Zhang, Hong Jian ^c  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b XIDIAN UNIVERSITY   (China)

^c CHINA INSTITUTE OF ATOMIC ENERGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; NUCLEAR BATTERIES; OPEN CIRCUIT VOLTAGE; SILICON CARBIDE;

AIR ELECTRODES; CARRIER SEPARATION; DESIGN TECHNOLOGIES; ELECTRONS ENERGY; OPEN-CIRCUIT VOLTAGES; PERFORMANCE; POWER CONVERSION EFFICIENCIES; SCHOTTKY ELECTRODES; SHORT CIRCUIT CURRENT DENSITY; SHUNT RESISTANCES;

SCHOTTKY BARRIER DIODES;

EID: 56349152251     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/10/076     Document Type: Article

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