Highly efficient low reverse biased 4H-SiC schottky photodiodes for UV-light detection

IEEE Photonics Technology Letters

Volumn 21, Issue 23, 2009, Pages 1782-1784

  Mazzillo, Massimo ^a   Condorelli, Giovanni ^a   Castagna, Maria Eloisa ^a   Catania, Giuseppe ^a   Sciuto, Antonella ^b   Roccaforte, Fabrizio ^b   Raineri, Vito ^b  

^a STMICROELECTRONICS   (Italy)

^b CNR IMM   (Italy)

Author keywords

4H SiC Schottky photodiode; Photovoltaic regime; Ultraviolet (UV) light detectors

Indexed keywords

HARSH ENVIRONMENT; HIGH QUANTUM EFFICIENCY; HIGH SENSITIVITY; HIGH SIGNAL-TO-NOISE RATIO; LOW-POWER CONSUMPTION; OPTICAL PERFORMANCE; PHOTOVOLTAIC REGIMES; REVERSE VOLTAGES; SCHOTTKY PHOTODIODES; SENSITIVE AREA; ULTRA-VIOLET LIGHT; ULTRAVIOLET (UV) LIGHT DETECTORS; ULTRAVIOLET LIGHTS; UV-LIGHT; VISIBLE BLINDNESS;

DETECTORS; FADING (RADIO); INDUSTRIAL APPLICATIONS; PHOTODETECTORS; PHOTODIODES; SIGNAL TO NOISE RATIO; SILICON CARBIDE; ULTRAVIOLET RADIATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 74549186953     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2033713     Document Type: Article

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