-
1
-
-
0032109136
-
The physics of ferroelectric memories
-
O. Auciello, J. F. Scott, and R. Ramesh, "The physics of ferroelectric memories," Phys. Today, vol. 51, no. 7, pp. 22-27, Jul. 1998. (Pubitemid 128608303)
-
(1998)
Physics Today
, vol.51
, Issue.7
, pp. 22-27
-
-
Auciello, O.1
Scott, J.F.2
Ramesh, R.3
-
2
-
-
4944260812
-
A nonvolatile memory element based on an organic field-effect transistor
-
Sep.
-
K. N. N. Unni, R. de Bettignies, S. Dabos-Seignon, and J.-M. Nunzi, "A nonvolatile memory element based on an organic field-effect transistor," Appl. Phys. Lett., vol. 85, no. 10, pp. 1823-1825, Sep. 2004.
-
(2004)
Appl. Phys. Lett.
, vol.85
, Issue.10
, pp. 1823-1825
-
-
Unni, K.N.N.1
De Bettignies, R.2
Dabos-Seignon, S.3
Nunzi, J.-M.4
-
3
-
-
14744284800
-
High-performance solution-processed polymer ferroelectric field-effect transistors
-
DOI 10.1038/nmat1329
-
R. C. G. Naber, C. Tanase, P. W. M. Blom, G. H. Gelinck, A. W. Marsman, F. J. Touwslager, S. Setayesh, and D. M. de Leeuw, "High-performance solution-processed polymer ferroelectric field-effect transistors," Nat. Mater., vol. 4, pp. 243-248, Mar. 2005. (Pubitemid 40330276)
-
(2005)
Nature Materials
, vol.4
, Issue.3
, pp. 243-248
-
-
Naber, R.C.G.1
Tanase, C.2
Blom, P.W.M.3
Gelinck, G.H.4
Marsman, A.W.5
Touwslager, F.J.6
Setayesh, S.7
De Leeuw, D.M.8
-
4
-
-
69949155612
-
Printable ferroelectric PVDF/PMMA blend films with ultralow roughness for low voltage non-volatile polymer memory
-
Sep.
-
S. J. Kang, Y. J. Park, I. Bae, K. J. Kim, H.-C. Kim, S. Bauer, E. L. Thomas, and C. Park, "Printable ferroelectric PVDF/PMMA blend films with ultralow roughness for low voltage non-volatile polymer memory," Adv. Funct. Mater., vol. 19, no. 17, pp. 2812-2818, Sep. 2009.
-
(2009)
Adv. Funct. Mater.
, vol.19
, Issue.17
, pp. 2812-2818
-
-
Kang, S.J.1
Park, Y.J.2
Bae, I.3
Kim, K.J.4
Kim, H.-C.5
Bauer, S.6
Thomas, E.L.7
Park, C.8
-
5
-
-
27744512125
-
Lowvoltage polymer field-effect transistors for nonvolatile memories
-
Nov.
-
R. C. G. Naber, B. de Boer, P.W.M. Blom, and D.M. de Leeuw, "Lowvoltage polymer field-effect transistors for nonvolatile memories," Appl. Phys. Lett., vol. 87, no. 20, pp. 203 509-1-203 509-3, Nov. 2005.
-
(2005)
Appl. Phys. Lett.
, vol.87
, Issue.20
, pp. 2035091-2035093
-
-
Naber, R.C.G.1
De Boer, B.2
Blom, P.W.M.3
De Leeuw, D.M.4
-
6
-
-
33847191330
-
Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors
-
Feb.
-
F. A. Yildirim, C. Ucurum, R. R. Schliewe, W. Bauhofer, R. M. Meixner, H. Goebel, and W. Krautschneider, "Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors," Appl. Phys. Lett., vol. 90, no. 8, pp. 083 501-1-083 501-3, Feb. 2007.
-
(2007)
Appl. Phys. Lett.
, vol.90
, Issue.8
, pp. 0835011-0835013
-
-
Yildirim, F.A.1
Ucurum, C.2
Schliewe, R.R.3
Bauhofer, W.4
Meixner, R.M.5
Goebel, H.6
Krautschneider, W.7
-
7
-
-
2442495340
-
All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator
-
Apr.
-
R. Schroeder, L. A. Majewski, and M. Grell, "All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator," Adv. Mater., vol. 16, no. 7, pp. 633-636, Apr. 2004.
-
(2004)
Adv. Mater.
, vol.16
, Issue.7
, pp. 633-636
-
-
Schroeder, R.1
Majewski, L.A.2
Grell, M.3
-
8
-
-
11044226139
-
Nonvolatile organic field-effect transistor memory element with a polymeric gate electret
-
DOI 10.1063/1.1828236, 3
-
T. B. Singh, N. Marjanovic, G. J. Matt, N. S. Sariciffci, R. Schwodiauer, and S. Bauer, "Nonvolatile organic field-effect transistor memory element with a polymeric gate electret," Appl. Phys. Lett., vol. 85, no. 22, pp. 5409-5411, Nov. 2004. (Pubitemid 40043594)
-
(2004)
Applied Physics Letters
, vol.85
, Issue.22
, pp. 5409-5411
-
-
Singh, Th.B.1
Marjanovic, N.2
Matt, G.J.3
Sariciftci, N.S.4
Schwodiauer, R.5
Bauer, S.6
-
9
-
-
33746311988
-
Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric
-
DOI 10.1109/TNANO.2006.876928, 1652855
-
Z. Liu, F. Xue, Y. Su, Y. M. Lvov, and K. Varahramyan, "Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric," IEEE Trans. Nanotechnol., vol. 5, no. 4, pp. 379-384, Jul. 2006. (Pubitemid 44102128)
-
(2006)
IEEE Transactions on Nanotechnology
, vol.5
, Issue.4
, pp. 379-384
-
-
Liu, Z.1
Xue, F.2
Su, Y.3
Lvov, Y.M.4
Varahramyan, K.5
-
10
-
-
48249132840
-
Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric
-
Jul.
-
L. Zhen, W. Guan, L. Shang, M. Liu, and G. Liu, "Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric," J. Phys. D, Appl. Phys., vol. 41, no. 13, p. 135 111, Jul. 2008.
-
(2008)
J. Phys. D, Appl. Phys.
, vol.41
, Issue.13
, pp. 135111
-
-
Zhen, L.1
Guan, W.2
Shang, L.3
Liu, M.4
Liu, G.5
-
11
-
-
57649131668
-
A flexible organic pentacene nonvolatile memory based on high-k dielectric layers
-
Dec.
-
M.-F. Chang, P.-T. Lee, S. P. McAlister, and A. Chin, "A flexible organic pentacene nonvolatile memory based on high-k dielectric layers," Appl. Phys. Lett., vol. 93, no. 23, pp. 233 302-1-233 302-3, Dec. 2008.
-
(2008)
Appl. Phys. Lett.
, vol.93
, Issue.23
, pp. 2333021-2333023
-
-
Chang, M.-F.1
Lee, P.-T.2
McAlister, S.P.3
Chin, A.4
-
12
-
-
77952988029
-
Organic floating-gate transistor memory based on the structure of pentacene/nanoparticle-Al/Al2O3
-
May
-
W. Wang and D. Ma, "Organic floating-gate transistor memory based on the structure of pentacene/nanoparticle-Al/Al2O3," Appl. Phys. Lett., vol. 96, no. 20, pp. 203 304-1-203 304-3, May 2010.
-
(2010)
Appl. Phys. Lett.
, vol.96
, Issue.20
, pp. 2033041-2033043
-
-
Wang, W.1
Ma, D.2
-
13
-
-
72149099927
-
Organic nonvolatile memory transistors for flexible sensor arrays
-
Dec.
-
T. Sekitani, T. Yokota, U. Zschieschang, H. Klauk, S. Bauer, K. Takeuchi, M. Takamiya, T. Sakurai, and T. Someya, "Organic nonvolatile memory transistors for flexible sensor arrays," Science, vol. 326, no. 5959, pp. 1516-1519, Dec. 2009.
-
(2009)
Science
, vol.326
, Issue.5959
, pp. 1516-1519
-
-
Sekitani, T.1
Yokota, T.2
Zschieschang, U.3
Klauk, H.4
Bauer, S.5
Takeuchi, K.6
Takamiya, M.7
Sakurai, T.8
Someya, T.9
-
14
-
-
66249125983
-
Multibit storage of organic thin-film field-effect transistors
-
May
-
Y. L. Guo, C. A. Di, S. H. Ye, X. N. Sun, J. Zheng, Y. G. Wen, W. P. Wu, G. Yu, and Y. Q. Liu, "Multibit storage of organic thin-film field-effect transistors," Adv. Mater., vol. 21, no. 19, pp. 1954-1959, May 2009.
-
(2009)
Adv. Mater.
, vol.21
, Issue.19
, pp. 1954-1959
-
-
Guo, Y.L.1
Di, C.A.2
Ye, S.H.3
Sun, X.N.4
Zheng, J.5
Wen, Y.G.6
Wu, W.P.7
Yu, G.8
Liu, Y.Q.9
-
15
-
-
27644501932
-
High-performance organic thin-film transistors with metal oxide/metal bilayer electrode
-
Nov.
-
C. Chu, S. Li, C. Chen, V. Shrotriya, and Y. Yang, "High-performance organic thin-film transistors with metal oxide/metal bilayer electrode," Appl. Phys. Lett., vol. 87, no. 19, pp. 193 508-1-193 508-3, Nov. 2005.
-
(2005)
Appl. Phys. Lett.
, vol.87
, Issue.19
, pp. 1935081-1935083
-
-
Chu, C.1
Li, S.2
Chen, C.3
Shrotriya, V.4
Yang, Y.5
-
16
-
-
33646509445
-
Metal nano-floatinggate memory devices fabricated at low temperature
-
Apr.-Sep.
-
S. Koliopoulou, P. Dimitrakis, D. Goustouridis, P. Normand, C. Pearson, M. C. Petty, H. Radamson, and D. Tsoukalas, "Metal nano-floatinggate memory devices fabricated at low temperature," Microelecton. Eng., vol. 83, no. 4-9, pp. 1563-1566, Apr.-Sep. 2006.
-
(2006)
Microelecton. Eng.
, vol.83
, Issue.4-9
, pp. 1563-1566
-
-
Koliopoulou, S.1
Dimitrakis, P.2
Goustouridis, D.3
Normand, P.4
Pearson, C.5
Petty, M.C.6
Radamson, H.7
Tsoukalas, D.8
-
17
-
-
34249875116
-
Nonvolatile polycrystalline silicon thin film transistor memory using silicon-rich silicon nitride as charge storage layer
-
May
-
Z. Pei, A. Chung, and H. L. Hwang, "Nonvolatile polycrystalline silicon thin film transistor memory using silicon-rich silicon nitride as charge storage layer," Appl. Phys. Lett., vol. 90, no. 22, pp. 223 513-1-223 513-3, May 2007.
-
(2007)
Appl. Phys. Lett.
, vol.90
, Issue.22
, pp. 2235131-2235133
-
-
Pei, Z.1
Chung, A.2
Hwang, H.L.3
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