Controlling contact resistance in top-gate polythiophene-based field-effect transistors by molecular engineering

Semiconductor Science and Technology

Volumn 26, Issue 3, 2011, Pages

  Noh, Yong Young ^a,b   Cheng, Xiaoyang ^a   Tello, Marta ^a,c   Lee, Mi Jung ^a   Sirringhaus, Henning ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Hanbat National University   (South Korea)

^c INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; DIPOLE ALIGNMENT; GATE VOLTAGES; GOLD CONTACTS; GOLD SOURCE; HIGH FIELD; HOLE INJECTION BARRIERS; HYDROPHOBIC SURFACES; INTERFACE DIPOLE; LAMELLAR MORPHOLOGY; METAL/SEMICONDUCTOR INTERFACE; MOLECULAR ENGINEERING; OPTIMIZED DEVICES; POLY-THIOPHENE; POLYMER FIELD EFFECT TRANSISTORS; SOURCE-DRAIN CONTACTS; TOP-GATE;

CONTACT RESISTANCE; CRYSTAL GROWTH; FILM GROWTH; HYDROPHOBICITY; ORGANIC POLYMERS; SELF ASSEMBLED MONOLAYERS; SURFACE CHEMISTRY; THIOPHENE;

FIELD EFFECT TRANSISTORS;

EID: 79951873735     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/3/034003     Document Type: Article

References (29)

1. Street R A and Salleo A 2002 Appl. Phys. Lett. 81 2887
2. Burgi L, Richards T J, Friend R H and Sirringhaus H 2003 J. Appl. Phys. 94 6129
3. Richards T J and Sirringhaus H 2007 J. Appl. Phys. 102 094510
4. Noh Y Y, Zhao N, Caironi M and Sirringhaus H 2007 Nat. Nano 2 784
5. Tulevski G S, Miao Q, Afzali A, Graham T O, Kagan C R and Nuckolls C 2006 J. Am. Chem. Soc. 128 1788
6. Sirringhaus H 2005 Adv. Mater. 17 2411
7. Dimitrakopoulos C D and Malenfant P R L 2002 Adv. Mater. 14 99
8. Hill I G 2005 Appl. Phys. Lett. 87 3
9. Gundlach D J, Zhou L, Nichols J A, Jackson T N, Necliudov P V and Shur M S 2006 J. Appl. Phys. 100 13
10. Tessler N and Roichman Y 2001 Appl. Phys. Lett. 79 2987
11. Sirringhaus H, Wilson R J, Friend R H, Inbasekaran M, Wu W, Woo E P, Grell M and Bradley D D C 2000 Appl. Phys. Lett. 77 406
12. Heeney M, Bailey C, Genevicius K, Shkunov M, Sparrowe D, Tierney D and McCulloch I 2005 J. Am. Chem. Soc. 127 1078
13. Ong B S, Wu Y L, Liu P and Gardner S 2004 J. Am. Chem. Soc. 126 3378
14. McCulloch I et al 2006 Nat. Mater. 5 328
15. Kahn A, Koch N and Gao W Y 2003 J. Polym. Sci. B 41 2529
16. Osikowicz W, De Jong M P, Braun S, Tengstedt C, Fahlman M and Salaneck W R 2006 Appl. Phys. Lett. 88 053502
17. Hamadani B H, Corley D A, Ciszek J W, Tour J M and Natelson D 2006 Nano Lett. 6 1303
18. Asadi K, Gholamrezaie F, Smits E C P, Blom P W M and De Boer B 2007 J. Mater. Chem. 17 1947
19. Takahiko M, Hisato K and Haruo K 2006 Appl. Phys. Lett. 89 123508
20. Cai Q J, Chan-Park M B, Zhang J, Gan Y, Li C M, Chen T P and Ong B S 2008 Org. Electron. 9 14
21. Campbell I H, Rubin S, Zawodzinski T A, Kress J D, Martin R L, Smith D L, Barashkov N N and Ferraris J P 1996 Phys. Rev. B 54 14321
22. Cheng X, Noh Y Y, Wang Tello Frisch J, Blum R P, Vollmer A, Rabe J P, Koch N and Sirringhaus H 2009 Adv. Funct. Mater. 19 2407
23. Tello M, Chiesa M, Duffy C M and Sirringhaus H 2008 Adv. Funct. Mater. 18 3907
24. Umeda T, Tokito S and Kumaki D 2007 J. Appl. Phys. 101 054517
25. De Boer B, Hadipour A, Mandoc M M, van Woudenbergh T and Blom P W M 2005 Adv. Mater. 17 621
26. Rentenberger S, Vollmer A, Zojer E, Schennach R and Koch N 2006 J. Appl. Phys. 100 6
27. Duhm S, Heimel G, Salzmann I, Glowatzki H, Johnson R L, Vollmer A, Rabe J P and Koch N 2008 Nat. Mater. 7 326
28. Michael L C, Rene L, Fred E, Michael F T, Iain M and Martin H 2007 Appl. Phys. Lett. 90 233508
29. Chabinyc M L, Toney M F, Kline R J, McCulloch I and Heeney M 2007 J. Am. Chem. Soc. 129 3226