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Japanese Journal of Applied Physics

Volumn 50, Issue 2, 2011, Pages

Characteristics of vanadium oxide thin films prepared by metal-organic decomposition for bolometer detectors

(3) Son, Le Ngoc a Tachiki, Takashi a Uchida, Takashi a

a NATIONAL DEFENSE ACADEMY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABRUPT TRANSITION; BOLOMETER DETECTORS; GRAIN SIZE; HEATING TIME; METAL ORGANIC DECOMPOSITION; ORDERS OF MAGNITUDE; RESISTIVITY CHANGES; SI SUBSTRATES; TEMPERATURE COEFFICIENT OF RESISTIVITY; TRANSITION TEMPERATURE; VANADIUM OXIDE THIN FILMS;

DECOMPOSITION; HYSTERESIS; SILICON COMPOUNDS; THIN FILMS; VANADIUM; VANADIUM COMPOUNDS;

OXIDE FILMS;

EID: 79951862741 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.025803 Document Type: Article

Times cited : (34)

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