High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Wu, C C ^a   Lin, D W ^a   Keshavarzi, A ^a   Huang, C H ^a   Chan, C T ^a   Tseng, C H ^a   Chen, C L ^a   Hsieh, C Y ^a   Wong, K Y ^a   Cheng, M L ^a   Li, T H ^a   Lin, Y C ^a   Yang, L Y ^a   Lin, C P ^a   Hou, C S ^a   Lin, H C ^a   Yang, J L ^a   Yu, K F ^a   Chen, M J ^a   Hsieh, T H ^a   Peng, Y C ^a   Chou, C H ^a   Lee, C J ^a   Huang, C W ^a   Lu, C Y ^a   Yang, F K ^a   Chen, H K ^a   Weng, L W ^a   Yen, P C ^a   Wang, S H ^a   Chang, S W ^a   Chuang, S W ^a   Gan, T C ^a   Wu, T L ^a   Lee, T Y ^a   Huang, W S ^a   Huang, Y J ^a   Tseng, Y W ^a   Wu, C M ^a   Ou Yang, Eric ^a   Hsu, K Y ^a   Lin, L T ^a   Wang, S B ^a   Kwok, T M ^a   Su, C C ^a   Tsai, C H ^a   Huang, M J ^a   Lin, H M ^a   Chang, A S ^a   Liao, S H ^a   Chen, L S ^a   Chen, J H ^a   Lim, P S ^a   Yu, X F ^a   Ku, S Y ^a   Lee, Y B ^a   Hsieh, P C ^a   Wang, P W ^a   Chiu, Y H ^a   Lin, S S ^a   Tao, H J ^a   Cao, M ^a   Mii, Y J ^a   more..

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

193NM IMMERSION LITHOGRAPHY; BULK FINFET; CMOS DEVICES; CMOS PROCESSS; DEVICE PERFORMANCE; ELECTROSTATIC CONTROL; GATE LENGTH; LONG CHANNEL DEVICES; MULTIPLE STRESSORS; SRAM STATIC NOISE MARGIN; STRINGENT REQUIREMENT;

CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES; INTEGRATED CIRCUITS;

EQUIPMENT;

EID: 79951839331     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703430     Document Type: Conference Paper

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