Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping

Journal of Crystal Growth

Volumn 311, Issue 11, 2009, Pages 3133-3137

  Li, J Z ^a   Bai, J ^a   Hydrick, J M ^a   Park, J S ^a   Major, C ^a   Carroll, M ^a   Fiorenza, J G ^a   Lochtefeld, A ^a  

^a AmberWave Systems Corporation   (United States)

Author keywords

A1. Defects; A2. III V on Si; A3. Aspect ratio trapping; A3. Metal organic chemical vapor deposition; B1. Gallium compounds

Indexed keywords

A1. DEFECTS; A2. III-V ON SI; A3. ASPECT RATIO TRAPPING; A3. METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; B1. GALLIUM COMPOUNDS;

ASPECT RATIO; DEFECTS; EPITAXIAL LAYERS; GALLIUM COMPOUNDS; GERMANIUM; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; PRESSURE DROP; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SILICON; SUBSTRATES; SURFACE DEFECTS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

GALLIUM ALLOYS;

EID: 65849234364     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.018     Document Type: Article

References (16)

1. Uen W.Y., Li Z.Y., Huang Y.C., Chen M.C., Yang T.N., Lan S.M., Wu C.H., Hong H.F., and Chi G.C. J. Crystal Growth 295 (2006) 103
2. Alex Chediak, Karen Scott, Peng Zhang, TICS 4, MSE 225, April 12, 2002.
3. Saravanan S., Jeganathan K., Baskar K., Jimbo T., Soga T., and Umeno M. J. Crystal Growth 195 (1998) 23
4. Fukuda Y., Kadota Y., and Ohmachi Y. Jpn. J. Appl. Phys. 27 (1988) 485
5. Mizuguchi K., Hayafuji N., Ochi S., Murotani T., and Fujikawa K. J. Crystal Growth 77 (1986) 509
6. Groenert M.E., Pitera A.J., Ram R.J., and Fitzgerald E.A. J. Vac. Sci. Technol. B 21 3 (2003) 1064
7. Wan A., Menon V., Forrest S.R., Wasserman D., Lyon S.A., and Kahn A. J. Vac. Sci. Technol. B 22 4 (2004) 1893
8. Chia C.K., Dong J.R., Chi D.Z., Sridhara A., Wong A.S.W., Suryana M., Dalapati G.K., Chua S.J., and Lee S.J. Appl. Phys. Lett. 92 (2008) 141905
9. Park J.-S., Bai J., Curtin M., Adekore B., Carroll M., and Lochtefeld A. Appl. Phys. Lett. 90 (2007) 05213
10. Li J.Z., Bai J., Park J.-S., Adekore B., Fox K., Carroll M., Lochtefeld A., and Shallenbarger Z. Appl. Phys. Lett. 91 (2007) 021114
11. Hydrick J.M., Park J.S., Bai J., Major C., Curtin M., Fiorenza J.G., Carroll M., and Lochtefeld A. ECS Trans. 16 10 (2008) 237
12. Bai J., Park J.-S., Cheng Z., Curtin M., Adekore B., Carroll M., and Lochtefeld A. Appl. Phys. Lett. 90 (2007) 101902
13. Yamaguchi M., Yamamoto A., Tachikawa M., Itoh Y., and Sugo M. Appl. Phys. Lett. 53 (1988) 2295
14. Tamura M., Yodo T., Saitoh T., and Palmer J. J. Crystal Growth 150 (1995) 654-660
15. S.L. Rommel, D. Pawlik, P. Thomas, M. Barth, K. Johnson, S.K. Kurinec, A. Seabaugh, Z. Cheng, J.Z. Li, J.S. Park, J.M. Hydrick, J. Bai, M. Carroll, J.G. Fiorenza, A. Lochtefeld, International Electron Devices Meeting, 2008, p. 739.
16. Wu Y.Q., Xu M., Ye P.D., Cheng Z., Li J., Park J.S., Hydrick J., Bai J., Carroll M., Fiorenza J.G., and Lochtefeld A. Appl. Phys. Lett. 93 (2008) 242106