RF performance of pre-patterned locally-embedded-back-gate graphene device

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Lee, Jaeho ^a   Chung, Hyun Jong ^b   Lee, Jaehong ^a   Shin, Hyungcheol ^a   Heo, Jinseong ^b   Yang, Heejun ^b   Lee, Sung Hoon ^b   Seo, Sunae ^b   Shin, Jaikwang ^b   Chung, U In ^b   Yoo, Inkyeong ^b   Kim, Kinam ^b  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; GATE FINGERS; GATE LENGTH; GATE OXIDE; GRAPHENE DEVICES; HIGH DIELECTRIC CONSTANTS; ICP-CVD; IN-PLANE; LOW TEMPERATURES; PARASITIC CAPACITANCE; PERFORMANCE OF DEVICES; RADIO FREQUENCIES; RF PERFORMANCE; SYMMETRIC STRUCTURES;

CUTOFF FREQUENCY; ELECTROMAGNETIC INDUCTION; ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; GRAPHENE; INDUCTIVELY COUPLED PLASMA; PLASMA DEPOSITION; TITANIUM NITRIDE;

CHEMICAL VAPOR DEPOSITION;

EID: 79951830639     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703422     Document Type: Conference Paper

References (6)

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