Physics-based simulation of carrier velocity in 2-dimensional P-type MOSFET

Proceedings - 2009 3rd Asia International Conference on Modelling and Simulation, AMS 2009

Volumn , Issue , 2009, Pages 735-738

  Riyadi, Munawar Agus ^a,b   Ahmadi, Mohammad Taghi ^a   Suseno, Jatmiko E ^a   Siew, Kang Eng ^a   Saad, Ismail ^a   Ismail, Razali ^a   Arora, Vijay K ^a  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b DIPONEGORO UNIVERSITY   (Indonesia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER VELOCITY; EFFECTIVE MASS; ENERGY-BAND DIAGRAM; FERMI-DIRAC STATISTICS; HEAVY HOLES; HIGH CONCENTRATION; INTRINSIC VELOCITY; LIGHT HOLES; MOS-FET; P-TYPE; P-TYPE SILICON; PHYSICS-BASED SIMULATION; THERMAL VELOCITY;

CONCENTRATION (PROCESS); VELOCITY;

CARRIER CONCENTRATION;

EID: 70349737574     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/AMS.2009.26     Document Type: Conference Paper

References (9)

1. S. Datta, Electronic transport in mesoscopic systems, Cambridge University Press, 1995
2. J. Guo, M. S. Lundestorm, Nanoscale Transistors Device Physics, Modeling and Simulation. Springer, 2006
3. M. Lundstrom, J.H. Rhew, "A Landauer Approach to Nanoscale MOSFETs", J. Computational Electronics, 2002, pp. 481-489
4. J.-H. Rhew, Z. Ren, and M. Lundstrom, "Numerical study of a ballistic MOSFET," Solid-State Electron., vol. 46, pp. 1899-1906, 2002
5. V. K. Arora, "Quantum Enginering of Nanoelectronic Devices: The Role of Quantum Emission in Limiting Drift Velocity and Diffusion coefficient," Microelectronics Journal, vol. 31, no.11-12, pp 853-859. 2000.
6. V. K. Arora, M. L. P. Tan, I. Saad, and R. Ismail, "Ballistic Quantum Transport in a Nanoscale Metal- Oxide-Semiconductor Field Effect Transistor," Appl. Phys. Let., Vol. 91, 2007, pp. 103510-103513.
7. X.-F. Fan, L. F. Register, B. Winstead, M. C. Foisy, W. Chen, X. Zheng, B. Ghosh, and S. K. Banerjee, "Hole Mobility and Thermal Velocity Enhancement for Uniaxial Stress in Si up to 4 GPa", IEEE Trans. Electron Devices, vol 54, 2007, pp. 291-296.
8. B.L. Anderson, R.L. Anderson, Fundamentals of Semionductor Devices, McGraw Hill, 2005
9. M. A. Riyadi, M. T. Ahmadi, I. Saad, R. Ismail, "Analytical Study of Carrier Statistic in 2-Dimensional Nanoscale P-MOS", in Proc. Intl. Conf. Nanosci. and Nanotech (NanoSciTech2008), Shah Alam, Malaysia, 18-20 Nov 2008