Application of quantum well-like thermocouple to thermoelectric energy harvester by BiCMOS process

Sensors and Actuators, A: Physical

Volumn 166, Issue 1, 2011, Pages 117-124

  Yang, S M ^a   Cong, M ^b   Lee, T ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

CMOS process; Silicon germanium quantum well; Thermoelectric generator; Thermoelectric materials

Indexed keywords

A-THERMAL; BI-CMOS PROCESS; CHARACTERISTIC LENGTH; CMOS PROCESSS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DESIGN IMPLEMENTATION; ENERGY HARVESTER; MAXIMUM POWER FACTOR; METAL LAYER; MICRO-THERMOELECTRIC GENERATOR; OPTIMAL PERFORMANCE; QUANTUM WELL; RELAXATION-TIME MODEL; SILICON GERMANIUM; THERMOELECTRIC ENERGY; THERMOELECTRIC GENERATOR; THERMOELECTRIC MATERIAL; VOLTAGE FACTORS;

CMOS INTEGRATED CIRCUITS; ELECTRIC POWER FACTOR; ENERGY HARVESTING; GERMANIUM; HARVESTERS; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WELLS; THERMOCOUPLES; THERMOELECTRICITY; THERMOMETERS;

THERMOELECTRIC EQUIPMENT;

EID: 79951681151     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2010.06.031     Document Type: Article

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