Development of a thermoelectric energy harvester with thermal isolation cavity by standard CMOS process

Sensors and Actuators, A: Physical

Volumn 153, Issue 2, 2009, Pages 244-250

  Yang, S M ^a   Lee, T ^a   Jeng, C A ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b I Sou University   (Taiwan)

Author keywords

CMOS process; Energy harvesting; Thermoelectric generator

Indexed keywords

A-THERMAL; BOTTOM SURFACES; CAVITY DEPTH; CMOS PROCESS; DESIGN VERIFICATION; ENERGY HARVESTING; IN-PLANE; MAXIMUM POWER FACTOR; MICRO-THERMOELECTRIC GENERATOR; OUTPUT POWER; POST PROCESS; POWER FACTORS; SIMULATION RESULT; STANDARD CMOS PROCESS; TEMPERATURE DIFFERENCES; TEMPERATURE GRADIENT; THERMAL ISOLATION; THERMOELECTRIC ENERGY; THERMOELECTRIC GENERATOR; VOLTAGE FACTORS;

ELECTRIC POWER FACTOR; HARVESTING; PLASMA ETCHING; SOLAR EQUIPMENT; STANDARDIZATION; THERMAL GRADIENTS; THERMOANALYSIS; THERMOCOUPLES; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; THERMOMETERS;

THERMAL EFFECTS;

EID: 67649435976     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2009.05.018     Document Type: Article

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