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Volumn 11, Issue 3, 2011, Pages 327-330

Effect of metallic precursors on the thin film thickness and reaction resistances in the selenization process

Author keywords

CIGS thin films; In situ resistance measurement; Phase transformation; Selenization

Indexed keywords

ALLOY PHASIS; CIGS THIN FILMS; CRYSTAL PHASIS; IN-SITU; METALLIC PRECURSOR; PHASE EVOLUTIONS; PHASE TRANSFORMATION; REACTION CHARACTERISTICS; REACTION PEAKS; REACTION RESISTANCE; RESISTANCE CURVES; RESISTANCE INCREASE; SE COMPOUNDS; SELENIZATION; TEMPERATURE RANGE; XRD;

EID: 79951679636     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.07.028     Document Type: Article
Times cited : (6)

References (18)
  • 17
    • 0029772716 scopus 로고    scopus 로고
    • Thin-film copper indium diselenide prepared by selenization of copper indium oxide formed by spray pyrolysis
    • E.B. Markus, and C. Michael Thin-film copper indium diselenide prepared by selenization of copper indium oxide formed by spray pyrolysis Thin Solid Films 272 1996 71
    • (1996) Thin Solid Films , vol.272 , pp. 71
    • Markus, E.B.1    Michael, C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.