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Volumn 11, Issue 3, 2011, Pages 327-330
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Effect of metallic precursors on the thin film thickness and reaction resistances in the selenization process
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Author keywords
CIGS thin films; In situ resistance measurement; Phase transformation; Selenization
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Indexed keywords
ALLOY PHASIS;
CIGS THIN FILMS;
CRYSTAL PHASIS;
IN-SITU;
METALLIC PRECURSOR;
PHASE EVOLUTIONS;
PHASE TRANSFORMATION;
REACTION CHARACTERISTICS;
REACTION PEAKS;
REACTION RESISTANCE;
RESISTANCE CURVES;
RESISTANCE INCREASE;
SE COMPOUNDS;
SELENIZATION;
TEMPERATURE RANGE;
XRD;
COPPER ALLOYS;
ELECTRIC RESISTANCE MEASUREMENT;
FILM THICKNESS;
GALLIUM;
GALLIUM ALLOYS;
THIN FILMS;
SEMICONDUCTING SELENIUM COMPOUNDS;
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EID: 79951679636
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2010.07.028 Document Type: Article |
Times cited : (6)
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References (18)
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