Characterization of stain etched p-type silicon in aqueous HF solutions containing HNO3 or KMnO4

Materials Chemistry and Physics

Volumn 126, Issue 3, 2011, Pages 676-684

  Mogoda, A S ^a   Ahmad, Y H ^a   Badawy, W A ^a  

^a CAIRO UNIVERSITY   (Egypt)

Author keywords

AC impedance; Etching; Silicon; Surface properties

Indexed keywords

AC-IMPEDANCE; CHEMICAL COMPOSITIONS; ELECTRICAL EQUIVALENT CIRCUIT; ELECTROCHEMICAL BEHAVIORS; ENERGY DISPERSIVE X-RAY; ETCHING TIME; HF CONCENTRATION; HF SOLUTIONS; IMPEDANCE DATA; OXIDIZING AGENTS; P-TYPE SILICON; POROUS LAYERS; POROUS SILICON LAYERS; POTASSIUM PERMANGANATE; SEM; SI SURFACES; SILICON SURFACES; SIMULTANEOUS DEPOSITION; STAIN ETCHING;

ELECTRIC IMPEDANCE; ELECTROCHEMICAL CORROSION; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; ETCHING; NITRIC ACID; OXIDATION; POROUS SILICON; POTASSIUM; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES;

HYDROFLUORIC ACID;

EID: 79951677690     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.12.063     Document Type: Article

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