Capacitance and conductance-frequency characteristics of Au-Sb/p-GaSe:Gd Schottky barrier diode

Vacuum

Volumn 85, Issue 8, 2011, Pages 798-801

  Duman, S ^a   Gurbulak B ^a   Dogan S ^a   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

GaSe; Interface states; Layered semiconductor; Schottky barrier diode

Indexed keywords

CAPACITANCE VALUES; CAPACITANCE-VOLTAGE CHARACTERISTICS; CONDUCTANCE-FREQUENCY; DENSITY DISTRIBUTIONS; ENERGY DISTRIBUTIONS; ENERGY RANGES; F VALUES; FORWARD BIAS; GASE; INTERFACE STATE; INTERFACE STATE DENSITY; INTERFACE STATES; LAYERED SEMICONDUCTORS; REVERSE BIAS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; TEMPERATURE RANGE;

CAPACITANCE; GADOLINIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 79951677616     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2010.11.018     Document Type: Article

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