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Volumn 62, Issue 1, 2011, Pages 54-56

Gadolinium scandate: Next candidate for alternative gate dielectric in CMOS technology?

Author keywords

CMOS technology; Gate dielectric; High ; X ray diffraction; X ray reflectivity

Indexed keywords


EID: 79951652794     PISSN: 13353632     EISSN: None     Source Type: Journal    
DOI: 10.2478/v10187-011-0009-z     Document Type: Article
Times cited : (7)

References (8)
  • 2
    • 33646430900 scopus 로고    scopus 로고
    • Gadolinium Scandate Thin Films as an Alternative Gate Dielectric Prepared by Electron Beam Evaporation
    • WAGNER, M., HEEG, T., SCHUBERT, J., LENK, S. T., MANTL, S., ZHAO, C., CAYMAX, M., DE GENDT, S.: Gadolinium Scandate Thin Films as an Alternative Gate Dielectric Prepared by Electron Beam Evaporation, Appl. Phys. Lett. 88 (2006), 172901.
    • (2006) Appl. Phys. Lett , vol.88 , pp. 172901
    • Wagner, M.1    Heeg, T.2    Schubert, J.3    Lenk, S.T.4    Mantl, S.5    Zhao, C.6    Caymax, M.7    De Gendt, S.8
  • 3
    • 33749247562 scopus 로고    scopus 로고
    • Atomic Layer Deposition of Gadolinium Scandate Films with High Dielectric Constant and Low Leakage Current
    • KIM, K. H., FARMER, D. B., LEHN, J. S. M., RAO, P. V., GORDON, R. G.: Atomic Layer Deposition of Gadolinium Scandate Films with High Dielectric Constant and Low Leakage Current, Appl. Phys. Lett. 89 (2006), 133512.
    • (2006) Appl. Phys. Lett , vol.89 , pp. 133512
    • Kim, K.H.1    Farmer, D.B.2    Lehn, J.S.M.3    Rao, P.V.4    Gordon, R.G.5
  • 5
    • 69249213937 scopus 로고    scopus 로고
    • 3 Films Prepared by Liquid Injection MOCVD
    • VINCZE, A., LUPTÁK, R., HUS̈EKOVÁ, K., Dobroc̈ka, E., FRÖHLICH, K.: Thermal Stability of GdScO3 and LaLuO3 Films Prepared by Liquid Injection MOCVD, Vacuum 84 No. 1 (2010), 170-173.
    • (2010) Vacuum , vol.84 , Issue.1 , pp. 170-173
    • Vincze, A.1    Lupták, R.2    Hus̈eková, K.3    Dobroc̈ka, E.4    Fröhlich, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.