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Volumn 1155, Issue , 2009, Pages 137-142
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Thermal stability of GdScO3 dielectric films grown on Si and InAIN/GaN substrates
a
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Author keywords
[No Author keywords available]
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Indexed keywords
GRAZING INCIDENCE X-RAY DIFFRACTION;
LIQUID INJECTIONS;
METALORGANIC CHEMICAL VAPOR DEPOSITION;
NITROGEN AMBIENT;
RECRYSTALLIZATIONS;
SI SUBSTRATES;
THERMAL BUDGET;
THERMAL STABILITY;
THERMAL TREATMENT;
TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY;
TOF SIMS;
UPPER LIMITS;
X RAY REFLECTIVITY;
AMORPHOUS FILMS;
DIELECTRIC FILMS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
ORGANIC CHEMICALS;
ORGANOMETALLICS;
RAPID THERMAL ANNEALING;
RAPID THERMAL PROCESSING;
SECONDARY ION MASS SPECTROMETRY;
THERMODYNAMIC STABILITY;
THERMOGRAVIMETRIC ANALYSIS;
X RAY DIFFRACTION;
SUBSTRATES;
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EID: 77950977117
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (6)
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