Finding voids in dual damascene Cu vias and their impact on reliability

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 343-346

  Dong, Walden ^a   Ji, Jackie ^a   Liang, Sanan ^a   Zhang, Mark ^a   Liao, Scott ^a   Niou, Chorng ^a   Chien, Wei Ting Kary ^a  

^a SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

Copper; Failure Analysis; Void

Indexed keywords

ALUMINUM; AUTOMOBILE MANUFACTURE; CHEMICAL ANALYSIS; COPPER; CRASHWORTHINESS; DEFECTS; ELECTRIC RESISTANCE; ELECTROMIGRATION; FAILURE ANALYSIS; ION BEAMS; RELIABILITY;

DEFECT IDENTIFICATION; ELECTRICAL RESISTANCES; ELECTROMIGRATION RESISTANCE; OPTICAL BEAM INDUCED RESISTANCE CHANGES; PASSIVE VOLTAGE CONTRASTS; PROCESS DEVELOPMENT; TRANSMISSION ELECTRONIC MICROSCOPIES; VOID;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 79951588923     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315349     Document Type: Conference Paper

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3. J. R. Lloyd, "Electromigration and Mechanical Stress", Miroelectronic Engineering, 49 (1999), pp. 51-64.
4. C. K. Hu, J. M. E. Harper, "Copper interconnections and reliability", Materials Chemistry and Physics, 52 (1998), pp. 5-16.
5. Akira Nishikawa, Naoko I. Kato, Yoshiteru Kohno, Nobuhito Miura, Masao Shimizu, "An Application of Passive Voltage Contrast (PVC) to Failure Analysis of CMOS LSIs Using Secondary Electron Collectin", ISTFA 1999