Shape and interband transition behavior of InAs quantum dots dependent on number of stacking cycles

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 54-57

  Kim, Kwang Moo ^a,b   Park, Young Ju ^a   Roh, Cheong Hyun ^a   Park, Young Min ^a   Kim, Eun Kyu ^c   Hyon, Chan Kyeong ^a,b   Park, Jung Ho ^b   Kim, Tae Whan ^d  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

^c Hanyang University   (South Korea)

^d Kwangwoon University   (South Korea)

Author keywords

InAs quantum dot; Interband transition; Molecular beam epitaxy; Multistacked quantum dot; Quantum dot shape; Strain fields

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM ARSENIDE QUANTUM DOTS; INTERBAND TRANSITION; PRECISION ION MILLING SYSTEM; SCANNING TRANSMISSION ELECTRON MICROSCOPE; SEMI-INSULATING GALLIUM ARSENIDE; STACKING CYCLE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038005526     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.54     Document Type: Article

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