AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 204-207

  Cheng, Kai ^a   Degroote, S ^a   Leys, M ^a   Medjdoub, F ^a   Derluyn, J ^a   Sijmus, B ^a   Germain, M ^a   Borghs, G ^a  

^a IMEC   (Belgium)

Author keywords

A1. Characterization; A3. Metal organic vapor phase epitaxy; B1. Nitrides; B3. High electron mobility transistors

Indexed keywords

A1. CHARACTERIZATION; A3. METAL ORGANIC VAPOR PHASE EPITAXY; AFM; ALN; ALN LAYERS; B1. NITRIDES; B3. HIGH ELECTRON MOBILITY TRANSISTORS; CARRIER GAS FLOW; ELECTRON DENSITIES; HETEROSTRUCTURES; IN-SITU; LOW GROWTH TEMPERATURE; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; ROOT MEAN SQUARE ROUGHNESS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

CRYSTALS; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH TEMPERATURE; HIGH ELECTRON MOBILITY TRANSISTORS; ORGANOMETALLICS; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SURFACE ACTIVE AGENTS; TWO DIMENSIONAL ELECTRON GAS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 79551690152     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.09.025     Document Type: Article

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