Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1967-1969

  Cheng, Kai ^a   Degroote, S ^a   Leys, M ^a   Medjdoub, F ^a   Derluyn, J ^a   Sijmus, B ^a   Germain, M ^a   Borghs, G ^a  

^a IMEC   (Belgium)

Author keywords

AlInN GaN; Electrical properties; High mobility transistors; MOVPE

Indexed keywords

ALGAN/GAN HEMTS; ALINN/GAN; DEVICE OPERATIONS; ELECTRICAL PROPERTY; ELECTRON DENSITIES; GATE LENGTH; HIGH CURRENT DENSITIES; HIGH MOBILITY; HIGH POWER SWITCHING; LARGE SIZES; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; SI (1 1 1); SI SUBSTRATES; SI(111) SUBSTRATE; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; EPITAXIAL GROWTH; GALLIUM NITRIDE; ORGANOMETALLICS; SHEET RESISTANCE; SILICON; TRANSISTORS; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77955790187     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983552     Document Type: Conference Paper

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