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Volumn 49, Issue 11, 2010, Pages
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Low-voltage oxide homojunction electric-double-layer transistors gated by ion-incorporated inorganic solid electrolytes
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Author keywords
[No Author keywords available]
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Indexed keywords
AIR AMBIENT;
COMPOSITE SOLID ELECTROLYTES;
CONTROL EXPERIMENTS;
DOUBLE LAYERS;
FIELD-EFFECT MOBILITIES;
HOMOJUNCTION;
HOMOJUNCTION TRANSISTORS;
INDIUM TIN OXIDE;
INORGANIC DIELECTRICS;
INORGANIC SOLID ELECTROLYTES;
ION TRANSPORTATION;
LOW-VOLTAGE;
NANO CHANNELS;
ON/OFF RATIO;
POROUS SIO;
SPECIFIC CAPACITANCE;
SUBTHRESHOLD SWING;
SURFACE PASSIVATION;
CALCIUM CHLORIDE;
PASSIVATION;
SILICON COMPOUNDS;
TIN;
SOLID ELECTROLYTES;
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EID: 79551653782
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.49.110201 Document Type: Article |
Times cited : (5)
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References (12)
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