On the impact of silicon nitride technology on charge trap NAND memories

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 490-493

  Sebastiani, A ^a   Scozzari, C ^a   Mauri, A ^a   Modelli, A ^a   Albini, G ^a   Piagge, R ^a   Bacciaglia, P ^a   Del Vitto, A ^a   Alessandri, M ^a   Grossi, A ^a   Tessariol, P ^a   Ghidini, G ^a  

^a Numonyx   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DATA STORAGE EQUIPMENT; ELECTRIC INSTRUMENT TRANSFORMERS; NITRIDES; PROGRAMMING THEORY; SILICON NITRIDE; VAPORS;

CHARGE RETENTION CHARACTERISTICS; CHARGE TRAPS; FILM PROPERTIES; IN-SITU STEAM GENERATED; LOW-PRESSURE CHEMICAL-VAPOR DEPOSITIONS; NITRIDE TECHNOLOGIES; NON-VOLATILE MEMORIES; RAPID THERMAL CHEMICAL VAPOR DEPOSITIONS;

CHARGE TRAPPING;

EID: 59949103323     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3025836     Document Type: Article

References (5)

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